FinFET 4T‐SRAM operable at near‐threshold region

Finfet Device Optimization at 15NM for Near-threshold Operation

Challenges in Manufacturing FinFET at 20nm node and beyond

Recently, there is strong interest in FinFET technology on bulk for lower cost and good compatibility with planar CMOS. Intel’s 22nm CMOS node is the 1 st commercially available bulk-FinFET technology and opens a new era of 3D CMOS for the low-power mobile electronics and continuously driving CMOS scaling and Moore’s law. The challenges in manufacturing FinFETs are reviewed. The Si surface of f...

FinFET Circuit Design

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic des...

Design of an Adiabatic FinFET Circuit Operating In Medium Strong Inversion Region

Scaling of device technology, the leakage power has become the main part of power consumption, which seriously reduces the energy recovery efficiency of adiabatic logic.CMOS devices are shrinking to nanometer regime, increasing the consequences in short channel effects and variations in the process parameters which lead to cause the reliability of the circu it as well as performance. To solve t...

On the nuclear reactions with participation of nearthreshold baryon resonances

The main features of nuclear reactions with participation of baryon resonances (∆(1232), S(1535) and Λ(1405)), which are interpreted as a manifestation of the bound states of nucleus and corresponding meson